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| SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB871 2SB871A DESCRIPTION *With TO-220C package *High speed switching *Low collector saturation voltage APPLICATIONS *For low voltage switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER 2SB871 VCBO Collector-base voltage 2SB871A 2SB871 VCEO Collector-emitter voltage 2SB871A VEBO IC ICM PC Tj Tstg Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -40 -5 -10 -20 40 150 -50~150 V A A W Open emitter -50 -20 V CONDITIONS VALUE -40 V UNIT SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB871 IC=-10mA; IB=0 2SB871A IC=-10A; IB=-0.33A IC=-10A; IB=-0.33A VCB=-40V; IE=0 CONDITIONS SYMBOL 2SB871 2SB871A MIN -20 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -40 -0.6 -1.5 V V VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SB871 2SB871A ICBO Collector cut-off current -50 VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-0.1A ; VCE=-2V IC=-3A ; VCE=-2V IE=0 ; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-10V 45 60 400 100 260 -50 A IEBO hFE-1 hFE-2 COB fT Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency A pF MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ; IB1=-IB2=-0.1A 0.1 0.5 0.1 s s s hFE-2 Classifications R 60-120 Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB871 2SB871A Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 |
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